PART |
Description |
Maker |
APT50GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT50GP60B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT13GP120K |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT80GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT80GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT65GP60L2DF2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT65GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET(减振钢板基本\u003d- 100V的,的Rds(on)\u003d 0.48ohm,身份证\u003d- 6.6A P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性(P沟道的HEXFET功率马鞍山场效应管) P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF International Rectifier, Corp.
|
2SK2941 2SK2941-ZJ-E2 2SK2941-ZJ-E1 2SK2941-ZJ-E1J |
Low voltage 4V drive power MOSFET MOS Field Effect Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|